Accession Number:

ADP013070

Title:

Regular Trends in Fine Structure and Localization of Excitons in Type II GaAs/AlAs Superlattices With a Gradient of Composition

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

Optically detected magnetic resonance and level anticrossing spectroscopy were used to reveal regular trends in the behavior of the fine structure of excitons, their dynamic properties and localization at the opposite interfaces in type II GaAsAlAs superlattices grown by MBE with a gradient of layer thicknesses in the SL plane.

Subject Categories:

  • Solid State Physics
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE