Accession Number:

ADP013060

Title:

Effect of Annealing on Phase Separation in Ternary III-N Alloys

Descriptive Note:

Conference proceedinggs

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2000-06-23

Pagination or Media Count:

3.0

Abstract:

The report investigated temperature dependence of photoluminescence for different types of structures with ternary III-N alloys. It is shown that optical properties can be strongly affected by composition fluctuations in AlGaN or InGaN alloys. For AlGaN layers rapid thermal annealing leads to effective decrease in nonuniformity. while for InGaN multilayer structure with dense arrays of quantum dots RTA leads to increase in phase separation.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE