Accession Number:
ADP013056
Title:
Argon Plasma Etching of Gallium Nitride: Spectroscopic Surprises
Descriptive Note:
Conference proceedings
Corporate Author:
CANTERBURY UNIV CHRISTCHURCH (NEW ZEALAND)
Personal Author(s):
Report Date:
2000-06-23
Pagination or Media Count:
4.0
Abstract:
It is shown that bulk reactive-ion-etched MOVPE-grown GaN can exhibit dramatically increased near-band-edge and below-band-gap emission when compared with unetched samples. A detailed spectroscopic study reveals firstly that donor bound excitons are the dominant species in the near-band-edge emission and secondly that previous models of the yellow luminescence band must be revised due to the clear linkage between the yellow emission and a little studied blue emission band, UV illumination on over a period of time enhances the yellow emission by a factor of 20 at room temperature, and it is shown that this effect can be employed for optical data storage and retrieval.
Descriptors:
Subject Categories:
- Solid State Physics
- Atomic and Molecular Physics and Spectroscopy