Accession Number:

ADP013056

Title:

Argon Plasma Etching of Gallium Nitride: Spectroscopic Surprises

Descriptive Note:

Conference proceedings

Corporate Author:

CANTERBURY UNIV CHRISTCHURCH (NEW ZEALAND)

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

It is shown that bulk reactive-ion-etched MOVPE-grown GaN can exhibit dramatically increased near-band-edge and below-band-gap emission when compared with unetched samples. A detailed spectroscopic study reveals firstly that donor bound excitons are the dominant species in the near-band-edge emission and secondly that previous models of the yellow luminescence band must be revised due to the clear linkage between the yellow emission and a little studied blue emission band, UV illumination on over a period of time enhances the yellow emission by a factor of 20 at room temperature, and it is shown that this effect can be employed for optical data storage and retrieval.

Subject Categories:

  • Solid State Physics
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE