Multiphonon Relaxation in ZnSe Thin Films and ZnSe/ZnCdSe Superlattice
RUSSIAN ACADEMY OF SCIENCES MOSCOW (RUSSIA) LEBEDEV INST
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The photoluminescence PL and resonant Raman scattering RRS spectra of thin films and multiple quantum well MQW structures were investigated at room temperature. The light scattering spectra of MQW consist of intensive band of the quantum wells luminescence and additional narrow bands. The energy shift of these additional bands was equal to the multiple value of longitudinal oscillation phonon of the strained ZnSe barriers. The intensity of these bands is resonance amplified at approaching the excitation radiation frequency to MQW luminescence bands frequency. We suppose, that this process consists of several stages absorption of stimulating light by quantum wells exchange of energy between hot electrons and barriers relaxation of system including longitudinal phonon generations in barriers.
- Solid State Physics