Accession Number:

ADP013037

Title:

Simulation of Pores Sealing During Homoepitaxy on Si(111) Surface

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES NOVOSIBIRSKINST OF SEMICONDUCTOR PHYSICS

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

Simulation of homoepitaxy process on porous Si111 using 3D Monte Carlo model was carried out to give estimation of necessary dose for complete pores overgrowth of different sizes porosity and various deposition flux intensities for given temperature.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE