Accession Number:
ADP013037
Title:
Simulation of Pores Sealing During Homoepitaxy on Si(111) Surface
Descriptive Note:
Conference proceedings
Corporate Author:
RUSSIAN ACADEMY OF SCIENCES NOVOSIBIRSKINST OF SEMICONDUCTOR PHYSICS
Personal Author(s):
Report Date:
2000-06-23
Pagination or Media Count:
4.0
Abstract:
Simulation of homoepitaxy process on porous Si111 using 3D Monte Carlo model was carried out to give estimation of necessary dose for complete pores overgrowth of different sizes porosity and various deposition flux intensities for given temperature.
Descriptors:
Subject Categories:
- Crystallography