Accession Number:

ADP013035

Title:

GaN/Al2O3 Epilayers Grown by MBE With a Controllable Nitrogen Plasma Composition

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Personal Author(s):

• Jmerik, V. N.
• Mamutin, V. V.
• Shubina, T. V
• Tkachman, M. G.
• Vekshin, V. A.

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

Descriptors:

• *MOLECULAR BEAM EPITAXY
• PLASMAS(PHYSICS)
• PHOTOLUMINESCENCE
• X RAY DIFFRACTION
• NITROGEN
• RUSSIA
• NITRATION
• GALLIUM NITRIDES
• NANOSTRUCTURES

Subject Categories:

• Industrial Chemistry and Chemical Processing

Distribution Statement:

APPROVED FOR PUBLIC RELEASE