Accession Number:

ADP013030

Title:

The Influence of Bi Doping of the InAs/GaAs Quantum Dots on Morphology and Photoelectronic Properties of the Heterostructures Obtained by MOVPE

Descriptive Note:

Conference Proceedings

Corporate Author:

UNIVERSITY OF NIZHNI NOVGOROD (RUSSIA)

Report Date:

2000-06-23

Pagination or Media Count:

3.0

Abstract:

Bi doping of InAs quantum dots layer during growth by MOVPE depresses coalescence of nanoclusters and advances obtaining more uniform distribution Of quantum dots size. Bi itself is practically not being incorporated into the QD material. Its role consists in limitation of In and As atoms diffusion mobility on the growing layer surface.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE