Optical and Structural Properties of BeCdSe/ZnSe QW Heterostructures Grown by MBE
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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In summary SQW and MQW structures of different thicknesses 2-10 nm based on a new II-VI compositional material BexCd1-xSe with a Be content ranging from 33 to 50 have been grown by MBE using different growth modes. The structures have demonstrated bright PL up to room temperature and no phase separation phenomena in the vicinity of x 0.46 corresponding to a composition lattice-matched to GaAs. Large energy gap bowing C 4.5 eV, refined using new experimental PL data, permits one to consider BeCdSe alloys with large Be content as suitable materials for a QW active region of ZnSe-based blue-green laser diodes.
- Solid State Physics