Novel Cd(Se,Te)/BeTe Nanostructures: Fabrication by Molecular Beam Epitaxy and Properties
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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IN CONCLUSION. CdSeBeTe type-il nanostructures have been grown by MBE on GaAs substrates and studied by RHEED. XRD and PL for the first time. These structures demonstrate extremely high sensitivity to the interface bond type BeSe or CdTe. with the CdTe interfaces providing much higher structural quality and PL intensity. Formation of the first CdTe interface, controlled by RHEED at the 0.1 ML level, causes radical variation of the structure morphology at a similar CdSe nominal thickness in the 1.0-1.5 ML range. it may be changed from the well defined homogeneous CdSe.Te QW in the case of the smooth interface to the array of CdSe-based nanoislands or QDs coupled by much thinner QW in the case of non-uniform locally strained interface. However. final conclusion on the intrinsic morphology of these structures needs high resolution transmission electron microscopy studies. which are currently under the way.
- Solid State Physics