Accession Number:

ADP013027

Title:

MBE Grown Ge Nanostructures on CaF(2)/Si(111)

Descriptive Note:

Conference Proceeding

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES NOVOSIBIRSKINST OF SEMICONDUCTOR PHYSICS

Report Date:

2000-06-23

Pagination or Media Count:

3.0

Abstract:

Germanium nanocrystals were grown on CaF2Si 111 by molecular beam epitaxy. Specific features of Ge and CaF2 growth have been analyzed in this work using electron diffraction and atomic force microscopy Well-pronounced Ge quantum dots were observed in case of growth on thick CaF2 buffer.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE