Accession Number:

ADP013023

Title:

Terahertz Emission of SiGe/Si Quantum Wells Doped With Shallow Acceptors

Descriptive Note:

Conference Proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES MOSCOW INST OF RADIO ENGINEERING AND ELECTRONICS

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

THz emission of stimulated character is observed in SiSiGeSi quantum well QW structures doped with boron. The resonance cavity formed by well parallel QW structure planes owing total internal reflection is necessary for the emission. The model of possible population inversion of strain-split acceptor levels is proposed.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE