Accession Number:

ADP013022

Title:

Resonant States and Terahertz Generation in Strained Semiconductors and Semiconductors Nanostructures

Descriptive Note:

Conference Proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2000-06-23

Pagination or Media Count:

5.0

Abstract:

This article presents a short review of theoretical investigation of resonant states induced by shallow acceptors in uniaxially strained semiconductors mechanism of population inversion induced by external electric field experimental results, and consideration of possible nanostructure for THz resonant states lasers.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE