Resonant States and Terahertz Generation in Strained Semiconductors and Semiconductors Nanostructures
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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This article presents a short review of theoretical investigation of resonant states induced by shallow acceptors in uniaxially strained semiconductors mechanism of population inversion induced by external electric field experimental results, and consideration of possible nanostructure for THz resonant states lasers.
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