Electron Spin Relaxation in Zinc-Blende Heterostructures
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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Spin relaxation in-plane anisotropy is predicted for heterostructures based on zinc-blende semiconductors. It is shown that it manifests itself especially brightly if the two spin relaxation mechanisms Dyakonov-Perel and Rashba are comparable in efficiency. It is demonstrated that for the quantum well grown along the 001 direction, the main axes of spin relaxation rate tensor are 110 and 110.
- Atomic and Molecular Physics and Spectroscopy
- Quantum Theory and Relativity