Accession Number:

ADP013014

Title:

Interaction Between Landau Levels of Different Two-Dimensional Subbands in GaAs

Descriptive Note:

Conference Proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES MOSCOW INST OF RADIO ENGINEERING AND ELECTRONICS

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

Tunneling studies measurements between strongly disordered two-dimensional electron systems in a magnetic field parallel to the current are presented. Two-dimensional electron systems are formed by Si delta doping of GaAs on both sides of the AlGaAs barrier. Strong interaction between Landau levels of different two-dimensional subbands in GaAs have been observed as anticrossing of related peak positions with magnetic field. The splitting of the interacted Landau levels is about 10 meV, which could not be explained by non-parabolicity of the conduction band in GaAs. The possible reasons of the observed interaction are discussed.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE