Accession Number:

ADP013007

Title:

Unipolar Semiconductor Lasers on Asymmetric Quantum Wells

Descriptive Note:

Conference Proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES MOSCOW (RUSSIA) LEBEDEV INST

Report Date:

2000-06-23

Pagination or Media Count:

5.0

Abstract:

We propose the original design of an active element of quantum unipolar semiconductor laser both for the optical pumping and current injection modes of operation. The peculiarities of the proposed design are strongly asymmetric barriers surrounding a double-well active element. The suppression of intersubband transitions to the lower working subband can be readily achieved if the transformation point of electronic state dimensionality for the lower subband occurs at small momentum. By this means the population inversion conditions in this system can be easily realized. The results of photoluminescence studies of the individual elements of the proposed structure are presented.

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE