Accession Number:

ADP013003

Title:

InGaAsN/GaAs Heterostructures for Long-Wavelength Light-Emitting Devices

Descriptive Note:

Conference Proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

2000-06-23

Pagination or Media Count:

4.0

Abstract:

We report on the growth and properties of InGaAsNGaAs heterostructures and on their applications for lasers emitting at lamba approximately equal 1.3 micrometers. Structures are grown by molecular beam epitaxy using an RF plasma-source. Broad area and ridge waveguide laser structures based on such QWs exhibit performance that can compete with those of 1.3 micrometers InGaAsP lasers. In particular. we have achieved 300 K operation of broad area lasers at 1.3 micrometers with threshold current density down to 400 Acm2 and 650 Acm2 for single and triple QW structures. Similar structures with heat sinking at 10 degrees C yield maximum output powers of 2.4 W cw and 4 W pulsed. Ridge waveguide lasers have thresholds down to 16 mA and show cw operation tip to 100 degrees C with a To of up to 110 K.

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE