Accession Number:

ADP013000

Title:

Growth and Structure of Mn=Ca1- chiF2 Epitaxial Films on Si(111)

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

Molecular beam epitaxy was used to grow films of MnF2 and CaF2 solid solutions on Si111 substrates. The composition of the solutions was measured using oscillations of reflection high energy electron diffraction, electron microprobe analysis and Rutherford backscattering and was in the range from 10In these solutions. step flow growth mode occurs even at relatively low temperature as 400 C in contrast to pure CaF2. The films have cubic fluorite crystal lattice. Their lattice parameter measured using X-ray diffraction decreases linearly from 0.544 nm to 0.536 nm in the above range.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE