Accession Number:

ADP012998

Title:

Structural Defects Due to Growth Interruptions in ZnSe-Based Heterostructures

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1999-06-18

Pagination or Media Count:

3.0

Abstract:

It has been shown that the growth interruption peffomed for calibration of VI-II flux ratio leads to the additional strain contrast in cross-sectional TEM images. Futhermore, this strain seems to be the driven force for the formation of extended defects immediately at the interruption interface. On the other hand, the developed alternately-strained SLs allow one to enhance the activation energy of the development and propagation of extended defects and protect the laser active region from the defects penetration. These findings, while being qualitative, are important for further decrease of the defects density in ZnSe-based laser structures.

Subject Categories:

  • Solid State Physics
  • Crystallography
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE