InAs/GaAs Stacked Lateral Superlattices Grown on Vicinal GaAs (001) Surfaces by Molecular Beam Epitaxy
RUSSIAN ACADEMY OF SCIENCES NOVOSIBIRSKINST OF SEMICONDUCTOR PHYSICS
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The MBE growth of strained InAsGaAs lateral superlattices on I vicinal 001 GaAs substrate is reported. The superlattices are produced by depositing alterately fractional monolayers of InAAs and GaAs via step flow growth. We demonstrate the growth of stacked InAs quantum wires array embedded in GaAs matrix. Vertical alignment of the InAs wires in stacked array is evidenced and attributed to stress-induced self-organization growth in lattice mismatched InAsGaAs material system.
- Solid State Physics