Annealing and Morphology Transformation Effects in MOCVD Grown of Self-Organized InAlAs-AlGaAs Quantum Dots
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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We report on MOCVD growth of the In,AlAs-se1f-organized quantum dots QD on Al,GaAs. We demonstrate that dense arrays about 2 x 10exp10cm2 of small about 5 nm QD are formed during annealing 75O C, 20 min, excess of arsine of In0.5Al0.5As deposited at 500 C on a Al0.6Ga0.4As surface as demonstrated by atomic force and transmission electron microscopies and by photoluminescense. We determined that the opening process continues at room temperature and gives rise to large clusters of submicron size after time of one. In contrast, an identical sample that is not annealed shows low density 2 x 10exp9cm2 of the QDs. Aging in this case gives results in a gradual smoothing of the morphology.
- Solid State Physics