Accession Number:

ADP012990

Title:

Self-Organized InGaAs/GaAs Quantum Wire Nanostructures Grown by Metal-Organic Vapor Phase Epitaxy

Descriptive Note:

Conference proceedings

Corporate Author:

UNIVERSITY OF NIZHNI NOVGOROD (RUSSIA)

Report Date:

1999-06-18

Pagination or Media Count:

3.0

Abstract:

We report on observation of new type of InGaAs self-assembled surface nanostructures grown on 001 GaAs by Metal-Organic Vapor Phase Epitaxy. Atomic Force NIicroscopy AFNI studies show presence of a homogeneous system of well ordered shaped rectangular nanoislands extended along the 100 direction. Optical properties of the structures studied by photoluminescence PL and photoconductivity PC spectroscopy indicate presence of 1D electronic states.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE