Accession Number:

ADP012988

Title:

Nitrogen Chemisorbed Layers on GaAs(100): Formation, Properties, Applications

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

We propose a novel wet chemical technology to form continuous nitride films on GaAs 100. For this nitridation hydrazine N2H4 -based water solutions are used X-ray photoemission analysis has shown that on the nitridized surfaces Ga-N surface bonds are dominant. We demonstrate that the proposed nitridation improves electronic properties of GaAs100 and produce an effective surface chemical passivation.

Subject Categories:

  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE