Accession Number:

ADP012979

Title:

Using of Self-Formed Semiconductor Micro- and Nanotubes as a Precise Etch Mask

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES NOVOSIBIRSKINST OF SEMICONDUCTOR PHYSICS

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

Concepts of making precise etch mask using self-formed tubes have been proposed and realized. The InGaAsGaAs mask-tubes diameter have been precisely controlled in the range from 4 micrometers to 8 nanometers. Using reactive ion etching and these mask-tubes. a mesa-structure and a groove on the GaAs substrate were fabricated.

Subject Categories:

  • Solid State Physics
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE