Vicinal Surface as a Tool for QD Control: InAs on GaAs
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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We have found that the application of GaAsOOI substrates misoriented to the 010 direction in conventional MBE growth gives an effective tool for the independent control of InAs QDs density and size permits to improve the QDs sizes dispersion. This possibility originates from special surface patterning which appear on misonented substrates and may be used in the MlE growth of different types of QDs.
- Solid State Physics