Accession Number:

ADP012972

Title:

Single Electron Transistor of Stack Design as Ultrasensitive Electrometer

Descriptive Note:

Conference proceedings

Corporate Author:

MOSCOW STATE UNIV (USSR)

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

We have fabricated and studied the noise characteristics of the stack-junction Single Electron Tunneling SET electrometer in which the island was completely screened from a dielectiic substrate. The noise figure of the device was found to be suprisingly low an equivalent charge noise was less than 8 x 10exp-6 esq.rt.Hz at the frequency 10 Hz or. in energy units, 30 h-bar.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE