Single Electron Transistor of Stack Design as Ultrasensitive Electrometer
MOSCOW STATE UNIV (USSR)
Pagination or Media Count:
We have fabricated and studied the noise characteristics of the stack-junction Single Electron Tunneling SET electrometer in which the island was completely screened from a dielectiic substrate. The noise figure of the device was found to be suprisingly low an equivalent charge noise was less than 8 x 10exp-6 esq.rt.Hz at the frequency 10 Hz or. in energy units, 30 h-bar.
- Solid State Physics