Accession Number:

ADP012969

Title:

Photocurrent Under Carrier Tunneling in GaAs/AlGaAs coupled Quantum Wells Embedded in p-i-n Heterostructure

Descriptive Note:

Conference proceedings

Corporate Author:

SAINT PETERSBURG STATE TECHNICAL UNIV (RUSSIA)

Report Date:

1999-06-18

Pagination or Media Count:

2.0

Abstract:

Photocurrent-bias characteristics of coupled quantum well photodiode were studied at different intensities of illuminating light with various spectral range. The optimal conditions for observation of THz radiation emission from such device are established.

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE