Accession Number:

ADP012965

Title:

New Type Intraband Quantum Well Laser

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES NIZHNY NOVGOROD INSTITUTE FOR PHYSICS OF MICROSTRUCTURES

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

A universal intraband IR laser scheme on Gamma-Gamma and X-Gamma valley transitions in GaAs- AlAs-like MQW systems under hot electron transfer from Gamma valley in GaAs to X valleys in AlAs in a high lateral electric field is proposed evaluated and simulated by the Monte-Carlo method. For a GaAs-AlAs MQW structure discussed the lasing electric field thresholds were found to be 8 kVcm and 14 kVcm with amplification coefficient of 300cm and 500cm near the thresholds at 80 K and 300 K at wavelength lambda approx 9 micromaters.

Subject Categories:

  • Lasers and Masers
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE