New Type Intraband Quantum Well Laser
RUSSIAN ACADEMY OF SCIENCES NIZHNY NOVGOROD INSTITUTE FOR PHYSICS OF MICROSTRUCTURES
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A universal intraband IR laser scheme on Gamma-Gamma and X-Gamma valley transitions in GaAs- AlAs-like MQW systems under hot electron transfer from Gamma valley in GaAs to X valleys in AlAs in a high lateral electric field is proposed evaluated and simulated by the Monte-Carlo method. For a GaAs-AlAs MQW structure discussed the lasing electric field thresholds were found to be 8 kVcm and 14 kVcm with amplification coefficient of 300cm and 500cm near the thresholds at 80 K and 300 K at wavelength lambda approx 9 micromaters.
- Lasers and Masers
- Atomic and Molecular Physics and Spectroscopy