Accession Number:

ADP012963

Title:

The Influence of Anticrossing of Exciton States on Exciton Relaxation in GaAs/A1GaAs Double Single Quantum Wells

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES CHERNOGOLOVKA (RUSSIA) INST OF MICROELECTRONICS TECHNOLOGY

Personal Author(s):

Report Date:

1999-06-18

Pagination or Media Count:

3.0

Abstract:

It was found that the dephasing time T2 of direct light hole excitons is decreased in 5 times by mixing its wave function with indirect heavy hole exciton wave function. The decreasing and restoring of light hole exciton dephasing time takes place two times for the values of external steady electric field from 1 V to 3 V. We hope this effect will be useful for the designing of new electro-optic devises.

Subject Categories:

  • Solid State Physics
  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE