Quantum Confined Pockels Effect and Optical Polarized Spectroscopy of Interfaces in Type-II Heterostructures
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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We report on a strong enhancement of the Pockels effect in direct-gap type-II ZnSeBeTe heterostructures. The effect has been found experimentally and analyzed theoretically. In quantum well structures with equivalent interfaces, say the Zn-Te and Te-Zn interfaces, the unbiased sample is optically isotropic in the plane perpendicular to the growth direction. In the presence of an electric field the electron and hole wave functions are pushed towards one of the interfaces and off from the other, as a result the balance is broken and the photoluminescence polarization becomes nonzero and reaches 70-80 in moderate electric fields. To desciibe the field-induced in-plane anisotropy in type-II heterostructures, a theoretical model has been developed which is based on the representation of optical matrix elements in the microscopical tight binding model.
- Solid State Physics
- Electrooptical and Optoelectronic Devices