Accession Number:

ADP012938

Title:

The Influence of Deposition Parameters on the Structure of Nanocrystalline Silicon

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

Nanocrystalline silicon films have been produced by PECVD metbod in SiH4 t H2 gas mixtures. Raman spectral IR absorption and absorption edge of the films have been investigated in a function of such deposition parameters as the gas dilution ratio H2O contamination the deposition temperature Td and the material of the substrate. The study of IR spectra has showed the presence of bonded hydrogen, with the total concentration CH varying from 4 to 13 at.. The analysis of Raman spectra has revealed that the films contain nanocrystallites embedded in amorphous matrix.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE