Second Harmonic Generation in Porous Silicon Multilayer Periodic Structures
MOSCOW STATE UNIV (RUSSIA) DEPT OF PHYSICS
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In tne paper second harmonic SH generation in a photonic bandgap structure was investigated. The intensity of SH from a multilayer structure exceeds the intensity of SH from both homogeneous layer of porous silicon and a single crystal silicon 100 substrate. The SH generation efficiency was found to be sensitive to parameters of photonic bandgap structures. The dependence of the SH signal on the azimuthal rotation angle is isotropic. SH radiation is polarized in the plane of incidence. The SH intensity is a nonmonotonic function of the angle of incidence, reaching its maximal value at the angle of incidence corresponding to the minimal phase mismatch in the multilayer periodic structure.
- Atomic and Molecular Physics and Spectroscopy
- Solid State Physics