Accession Number:

ADP012925

Title:

Investigation of the Characteristics of Interband Resonant Tunnelling Diodes with Modified Barriers

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES MOSCOW INST OF PHYSICS AND TECHNOLOGY

Personal Author(s):

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

This article investigated theoretically the I-V characteristics of the InAsAlSbGaSb and InAsAlGaSbGaSb RTS at room and liquid nitrogen temperature. It was shown that the values of the peak current density and PV current ratio can be essentially enlarged by employing AlGaSb barriers instead of AlSb barriers. For the InAsAlGaSbGaSb RTS the values of PV current ratio greater than all until now known experimental values for RTS were obtained.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE