Investigation of the Characteristics of Interband Resonant Tunnelling Diodes with Modified Barriers
RUSSIAN ACADEMY OF SCIENCES MOSCOW INST OF PHYSICS AND TECHNOLOGY
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This article investigated theoretically the I-V characteristics of the InAsAlSbGaSb and InAsAlGaSbGaSb RTS at room and liquid nitrogen temperature. It was shown that the values of the peak current density and PV current ratio can be essentially enlarged by employing AlGaSb barriers instead of AlSb barriers. For the InAsAlGaSbGaSb RTS the values of PV current ratio greater than all until now known experimental values for RTS were obtained.
- Solid State Physics