Accession Number:

ADP012910

Title:

Cross-Sectional Atomic Force Microscopy of ZnSe-Based Laser Diodes

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

Cleaved facets of ZnBeMgSe-based lasers with different design of active region have been studied by means of the cross-sectional atomal friction force microscopy AFM and LFM. A difference in function coefficients has been successfully exploited to image basic layers of the laser diodes. The Be-containing cladding layers and the waveguide area are revealed as regions of lower friction as compared to a GaAs substrate. Elastic strains accumulated at the layer boundaries are displayed via nanometer-high steps and undulations forming in the morphology of the cleaved facets. A remarkable reduction of the elastic strain in the active region containing a Zn, CdSe quantum well has been found for the laser with the specially designed alternately-strained superlattice in the waveguide.

Subject Categories:

  • Solid State Physics
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE