Accession Number:

ADP012909

Title:

Structure of Stacked InAs Quantum Dots in a Si Matrix: HRTEM Experimental Results and Modeling

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

A quantum dot structure containing two layers of small coherent InAs clusters embedded into Si single crystal matrix was grown by MBE. The structure of these clusters was investigated by high resolution transmission electron microscopy. The quality of the grown structure severely depends on the substrate temperature growth sequence and the geometrical parameters of the sample. Investigation demonstrate that Si crystal can incorporate only a limited volume of the deposited InAs in a form of coherent clusters.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE