Structure of Stacked InAs Quantum Dots in a Si Matrix: HRTEM Experimental Results and Modeling
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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A quantum dot structure containing two layers of small coherent InAs clusters embedded into Si single crystal matrix was grown by MBE. The structure of these clusters was investigated by high resolution transmission electron microscopy. The quality of the grown structure severely depends on the substrate temperature growth sequence and the geometrical parameters of the sample. Investigation demonstrate that Si crystal can incorporate only a limited volume of the deposited InAs in a form of coherent clusters.
- Solid State Physics