Accession Number:

ADP012907

Title:

Three-Dimensional (3D) Arrays of Silicon Nanosize Elements in the Void Sublattice of Artificial Opals

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

Silicon is now the most important material in moderm solid state electronics. Regular systems of silicon nanoclusters containing up to 10exp14cm3 elements have been fabricated in a sublattice of opal voids. Structural studies of samples by TEM. HREM and Raman measurements were carried out. The regular lattices of Pt-Si junctions were obtained and their current-voltage characteristics CVC were investigated.

Subject Categories:

  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE