Accession Number:

ADP012894

Title:

The Plateau-Insulator Phase Transition in the Quantum Hall Regime

Descriptive Note:

Conference proceedings

Corporate Author:

AMSTERDAM UNIV (NETHERLANDS)

Report Date:

1999-06-28

Pagination or Media Count:

4.0

Abstract:

We report experiments on the plateau-insulator transition in a low mobility In0.53Ga0.47AsInP heterostructure. An exponential law describes the resistance rhoxx and we extract a critical exponent K0.55-0.05 which is slightly different from the established value K0.425-0.04 for the plateau transitions. Upon correction for the temperature dependence of the critical conductance sigmaxx our data indicate that the plateau-plateau and plateau-insulator transitions are in the same universality class.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE