Accession Number:

ADP012890

Title:

Peculiarities of Radiative Recombination in BeMgZnSe/ZnCdSe Injection Lasers

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

The wide band gap II-IV compounds are considered to be most suitable for manufacturing light emitting diodes LED and lasers emitting in a short wavelength range of visible spectrum. Now the utmost interest to such lasers is related to a potential opportunity for creation large-color-screen projection television. Recently. clue to the relatively fast progress in the improvement of the structural properties of Mg,Zn,CdS,Se heterostructures several groups have reported on lasing both at low and room temperature RT. But short lifetime of injection blue-green lasers at RT still limits their commercial application In this paper we report on study of the main characteristics of RT injection lasers based on BeMgZnSeZnCclSe separated confinement heterostructure SCH.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE