Accession Number:

ADP012889

Title:

QW Diode Laser Modulation by Lateral Gain Tailoring

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

We present a new modulation technique by the control of latenil modal gain profile in four-terminal stepped-mesa diode laser. The simulation of the high frequency laser characteristics is performed on the basis of a computer model of stripe geometry diode laser which takes into account lateral effects. Modulaflon bandwidth of II GHz for ridge laser can be extended for 5 6 GHz by employing a newly developed stepped-mesa laser design. Moreover. nearly flat small signal modulation response with 3 dB bandwidth as high as 38 GHz can be obtained by making use of modulation of the lateral gain profile.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE