QW Diode Laser Modulation by Lateral Gain Tailoring
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
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We present a new modulation technique by the control of latenil modal gain profile in four-terminal stepped-mesa diode laser. The simulation of the high frequency laser characteristics is performed on the basis of a computer model of stripe geometry diode laser which takes into account lateral effects. Modulaflon bandwidth of II GHz for ridge laser can be extended for 5 6 GHz by employing a newly developed stepped-mesa laser design. Moreover. nearly flat small signal modulation response with 3 dB bandwidth as high as 38 GHz can be obtained by making use of modulation of the lateral gain profile.
- Lasers and Masers