Accession Number:

ADP012888

Title:

1.3 UM Emission from 2 ML InAs Quantum Dots in a GaAs Matrix

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1999-06-18

Pagination or Media Count:

3.0

Abstract:

We studied dependence of structural and optical properties of the structures with InAs QDs embedded in In,Ga,AlAs QW and demonstrated the possibility to reach the 1.3 micrometer emission range by using 2 ML InAs QDs as stressors for stimulated alloy decomposition.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE