Accession Number:

ADP012878

Title:

Influence of a Built-In Potential on Electron Transport Properties of Metallic Ballistic Structures, as Evidence of Quantum-Well Effect

Descriptive Note:

Conference proceedings

Corporate Author:

CHALMERS UNIV OF TECHNOLOGY GOETEBORG (SWEDEN)

Report Date:

1999-06-18

Pagination or Media Count:

4.0

Abstract:

New types of metallic low-dimensional structures fabricated on the basis of high-quality epitaxial refractory-metal films possess new properties that are unusual for metallic conductors. It can be attributed to the realisation of the ballistic limit in electron transport leading to sliding electrons come into play and a spatial quantisation of an electron momentum is important. Under this condition. the scattering of conducting electrons is controlled also by the properties of the built-in potential. it gives rise to new phenomena in electron transport of metallic conductors associated with this mechanism.

Subject Categories:

  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE