Accession Number:

ADP012874

Title:

Transport Properties of InA1As/InGaAs/InP Graded nChannel Pseudomorphic High Electron Mobility Structures

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1999-06-18

Pagination or Media Count:

3.0

Abstract:

IWe studied the effect of the composition profile of pseudomorphic channel on transport properties of InGaAsInAlAs structures. The increase in the effective separation of 2DEG from the heterointerface and the channel thickness was shown to be the key point to achieve the maximal mobility. The possibility to achieve excellent transport properties in structures with very thin InGaAs buffer layer is shown.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE