Accession Number:

ADP012869

Title:

Photoluminescence Study of InP Nanoscale Islands Grown by MOVPE in InGaAs/GaAs Matrix

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1999-06-18

Pagination or Media Count:

3.0

Abstract:

Photoluminescence study PL of the self-assembling Stranski Krastanov growth of InP nanoscale islands embedded in In0.49Ga0.51P matrix by low pressure metal organic vapor phase epitaxy are presented. The temperature and the excitation level dependencies of the external quantum efficiency of these structures were invesflgated. InP nanoislands demonstrate a high quantum efficiency at 77 K and high PL wavelength temperature stability.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE