Accession Number:

ADP012852

Title:

GaN-Based Two-Dimensional Electron Devices

Descriptive Note:

Conference proceedings

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY NY

Personal Author(s):

Report Date:

1998-06-01

Pagination or Media Count:

7.0

Abstract:

We discuss the properties of the two dimensional 2D electron gas at AlGaNGaN heterointerface. The density of the 2D gas is affected by piezoelectric effects and by doping levels in both AlGaN and GaN layers. The record vatues of the sheet carrier density have been achieved wfth sheet electron densities of the two-dimensional electron gas on the order of 1.5 x 10exp13cm2 and the sheet carrier concentration in the surface heterostructure channel as high as 4 x 10exp13cm2. At high electron concentration, electrons are divided between the 2D and 3D states, and this division affects the electron mobility in the channeL Optical polar scattering, impurity scattering, and piezoelectric scattering limit the mobility. The largest electron mobility was observed in AIGaNGaN heterostructures grown on SiC. At room temperature, the mobility is over 2,000 cm2V-s at cryogenic ten1peratures, the highest nobdity is over 10,000 cm2V-s. These values are high enough for the observation of the Quantum Hall Effect. Multichannel 2D electron structures are being developed that will allow us to achieve a much higher current density and much higher power.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE