Accession Number:

ADP012839

Title:

Mechanism of Photoluminescence from Sl-Nanocrystals Fabricated in SiO2 -Matrix

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES NOVOSIBIRSKINST OF SEMICONDUCTOR PHYSICS

Report Date:

1998-06-01

Pagination or Media Count:

4.0

Abstract:

The luminescence properties of silicon nanocrystals formed by Si ion implantation into SiO2 matrix and a subsequent thermal annealing have been studied. For identification of PL mechanism the dependencies of cw PL on temperature and excitation power density, and time-resolved PL have been investigated. Expenmental results point to the mechanism of recombination via the levels of centers which are localized on the silicon nanocrystal-silicon dioxide boundary

Subject Categories:

  • Solid State Physics
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE