Accession Number:

ADP012835

Title:

Raman Scattering in Strained Highly-Doped P-Type GaAs/GaAsP Epitaxial Layers

Descriptive Note:

Conference proceedings

Corporate Author:

SAINT PETERSBURG STATE TECHNICAL UNIV (RUSSIA)

Report Date:

1998-06-01

Pagination or Media Count:

3.0

Abstract:

Subject Categories:

  • Solid State Physics
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE