Accession Number:

ADP012821

Title:

Radiative Characteristics of InAs/InGaAs/InP Quantum Dot Injection Lasers

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1998-06-01

Pagination or Media Count:

4.0

Abstract:

Quantum dot QD heterostructures have recently became the subject of the intensive research. tnjection lasers with an active region based on InGaAsAlGaAs QD have shown ultralow threshold current density Jsubth. However the emission wavelength of QDs formed on GaAs substrate is limited by the value of 1.3 microns. It has been previously shown that the QD emission range can be extended up to 2 microns by embedding the InAs QDs into an InGaAs matrix grown on InP substrate. In this work we study threshold, tempemture and power characteristics of InAsInGaAsInP injection lasers.

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE