Accession Number:

ADP012787

Title:

Investigation of Self-Organized Nanoheterostructure Properties in InGaAsP Solid Solutions

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST

Report Date:

1998-06-01

Pagination or Media Count:

3.0

Abstract:

Properties of self organized InGaAsP nanoheterostructures grown on InP and GaAs substrates have been investigated by photoluminescence and transmission electron microscopy TEM methods. The dependence of epitaxial growth temperature and solution supercooling on the rate of self-organization of periodical InGaAsP nanoheterostructures has been determined. Periodical picture in the plan view and cross Section of TEM image of InGaAsP epitaxal layers have been observed.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE