Modelling the Self-Organization of Boron Clusters in Silicon
RUSSIAN ACADEMY OF SCIENCES MOSCOW KELDYSH INST OF APPLIED MATHEMATICS
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The paper illustrates application the theory of self organization to practical problems in the physics on nanostructures. Starting from the principles of the theory of self-organization, the formation of dissipative structures as found experimentally in annealed highly-boron-doped silicon samples is explained. A qualitative reaction-diffusion model is developed which reproduces the formation of spatially ordered boron clusters distribution in the form of equidistant maxima. Perspectives of more exact quantitative models describing the extraordinary evolution of boron dopant in silicon are discussed.
- Solid State Physics