Accession Number:

ADP012785

Title:

Modelling the Self-Organization of Boron Clusters in Silicon

Descriptive Note:

Conference proceedings

Corporate Author:

RUSSIAN ACADEMY OF SCIENCES MOSCOW KELDYSH INST OF APPLIED MATHEMATICS

Report Date:

1998-06-01

Pagination or Media Count:

4.0

Abstract:

The paper illustrates application the theory of self organization to practical problems in the physics on nanostructures. Starting from the principles of the theory of self-organization, the formation of dissipative structures as found experimentally in annealed highly-boron-doped silicon samples is explained. A qualitative reaction-diffusion model is developed which reproduces the formation of spatially ordered boron clusters distribution in the form of equidistant maxima. Perspectives of more exact quantitative models describing the extraordinary evolution of boron dopant in silicon are discussed.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE