Quantum Mott Transition in Mesoscopic Semiconductors
MOSCOW STATE UNIV (USSR)
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Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with negligible dependence on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
- Solid State Physics