Accession Number:

ADP012775

Title:

Quantum Mott Transition in Mesoscopic Semiconductors

Descriptive Note:

Conference proceedings

Corporate Author:

MOSCOW STATE UNIV (USSR)

Report Date:

1998-06-01

Pagination or Media Count:

4.0

Abstract:

Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with negligible dependence on the actual position of the dopants. The found conditions are feasible in experimentally available structures.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE