Investigation of Hot Hole Distribution and Real Space Transfer by Interband Absorption in P-Type InGaAs/GaAs MQW Heterostructures
RUSSIAN ACADEMY OF SCIENCES NIZHNY NOVGOROD INSTITUTE FOR PHYSICS OF MICROSTRUCTURES
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Lateral electric field up to 2 kVcm effects on transmittance in selectively doped p-type MQW InxGa1-xAsGaAs heterostructures with delta-doped barriers have been studied. The peculiarities of the transmittance spectra associated wfth hole transitions from the acceptors to the quantum wells and with the hole escape from the quantum wells into the GaAs barriers have been observed. The hole effective temperature in the quantum wells and the population of impurity states in high electric fields were obtained.
- Solid State Physics
- Atomic and Molecular Physics and Spectroscopy